Investigating the Effect of Increased Heatsink Temperature and Packaging-Induced Strain in a Single Emitter Laser Using a Laser Diode Simulation/Emulation Tool

Christian Kwaku Amuzuvi; Fuseini Mumuni

doi:doi:10.11648/j.jeee.20130104.12

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Investigating the Effect of Increased Heatsink Temperature and Packaging-Induced Strain in a Single Emitter Laser Using a Laser Diode Simulation/Emulation Tool

Christian Kwaku Amuzuvi, Fuseini Mumuni

Published in Journal of Electrical and Electronic Engineering (Volume 1, Issue 4)

Received: 2 September 2013 Published: 30 September 2013

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Abstract

This paper explores further the capability and versatility of Barlase in establishing deeper understanding of the behaviour of an emitter in a laser bar. The interactions between an emitter and the substrate upon which it is mounted are important in learning more about the degradation process that occurs in lasers. It is well known that various factors come into play in the operation of individual emitters and full laser bars (L-I characteristics, threshold, efficiency, etc.) but one of the most important is the effect of increased heatsink temperature and packaging-induced strain in laser bars. Barlase is therefore used to investigate these effects based on the Arrhenius equation. The relevant parameters are updated at each aging step. Barlase allows a better understanding of how current competition, temperature and the level of defects affect the output power and the degradation rate of a bar.

Published in	Journal of Electrical and Electronic Engineering (Volume 1, Issue 4)
DOI	10.11648/j.jeee.20130104.12
Page(s)	73-78
Creative Commons	This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited.
Copyright	Copyright © The Author(s), 2013. Published by Science Publishing Group

Keywords

By-Emitter, Emitter, Quantum Well, Defect, Heatsink Temperature, Non-Radiative Recombination, Packaging-Induced Strain, Degradation, Temperature, Threshold Current, Slope Efficiency

References

[1]	Schulz, W. and R. Poprawe, 2000. "Manufacturing with novel high-power diode lasers", IEEE Journal of Selected Topics in Quantum Electronics, vol. 6, pp. 696-705.
[2]	Gannot, I and R. W. Waynant, 2001. "Introduction to the issue on lasers in medicine and biology", IEEE Journal of Selected Topics in Quantum Electronics, vol. 7, pp. 873-873.
[3]	Rochat, E., K. Haroud, and R. Dandliker, 1999. "High-power Nd-doped fiber amplifier for coherent intersatellite links", IEEE Journal of Quantum Electronics, vol. 35, pp. 1419-1423.
[4]	Amuzuvi, C. K. and J. C. Attachie, 2013. "Describing a Laser Diode Emulation Tool Using Single Emitter Simulation Results". Research Journal of Applied Sciences, Engineering and Technology, 5(04): 1358-1361.
[5]	Xia, R., E. C. Larkins, I. Harrison, S. R. A. Dods, A. V. Andrianov, J. Morgan and J. P. Landesman, 2002. "Mounting-induced strain threshold for the degradation of high-power AlGaAs laser bars", IEEE Photon. Technol. Lett., 14, 893.
[6]	Tomm J. W., A. Gerhardt, T. Elsaesser, D. Lorenzen, and P. Hennig, 2002. "Simultaneous quantification of strain and defects in high-power diode laser devices", Applied Physics Letters, vol. 81, pp. 3269-3271.
[7]	Bull S., J. W. Tomm, M. Oudart, J. Nagle, C. Scholz, K. Boucke, I. Harrison, and E. C. Larkins, 2005. "By-emitter degradation analysis of high-power laser bars", Journal of Applied Physics, vol. 98, p. 063101.
[8]	Lim, J. J., T. M. Benson and E. C. Larkins, 2005 "Design of wide-emitter single-mode laser diodes", IEEE J. Quantum Electron., 41, 506.
[9]	Bream, P. J., J. J. Lim, S. Bull, A. V. Andrianov, S. Sujecki and E. C. Larkins, 2006. "The impact of nonequilibrium gain in a spectral laser diode model", Opt. Quantum Electron., 38, 1019.
[10]	Amuzuvi, C. K., 2013. Emulation and By-Emitter Degradation Analysis of High Power Lasers: Lap Lambert Academic Publishing, Saarbrücken, Germany, ISBN 978-3-659-37035-9.
[11]	Agrawal G. P. and N. K. Dutta, 1993. Semiconductor Lasers: Kluwer Academic Publishers; 2nd Revised edition edition.
[12]	Amuzuvi, C. K., Bull S., Tomm J. W., Nagle J., Larkins E. C., Sumpf B., Erbert G., Michel N., and Krakowski M., 2011. "The impact of temperature and packaging-induced strain on current competition and emitter power in laser bars" Applied Physics Letter.
[13]	Bull S., 2004. "Photo- and Electroluminescence Microscopy and Spectroscopy Investigation of High Power and High Brightness Semiconductor Laser Diode", Dissertation, University of Nottingham, United Kingdom.

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APA Style

Christian Kwaku Amuzuvi, Fuseini Mumuni. (2013). Investigating the Effect of Increased Heatsink Temperature and Packaging-Induced Strain in a Single Emitter Laser Using a Laser Diode Simulation/Emulation Tool. Journal of Electrical and Electronic Engineering, 1(4), 73-78. https://doi.org/10.11648/j.jeee.20130104.12

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ACS Style

Christian Kwaku Amuzuvi; Fuseini Mumuni. Investigating the Effect of Increased Heatsink Temperature and Packaging-Induced Strain in a Single Emitter Laser Using a Laser Diode Simulation/Emulation Tool. J. Electr. Electron. Eng. 2013, 1(4), 73-78. doi: 10.11648/j.jeee.20130104.12

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AMA Style

Christian Kwaku Amuzuvi, Fuseini Mumuni. Investigating the Effect of Increased Heatsink Temperature and Packaging-Induced Strain in a Single Emitter Laser Using a Laser Diode Simulation/Emulation Tool. J Electr Electron Eng. 2013;1(4):73-78. doi: 10.11648/j.jeee.20130104.12

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@article{10.11648/j.jeee.20130104.12,
  author = {Christian Kwaku Amuzuvi and Fuseini Mumuni},
  title = {Investigating the Effect of Increased Heatsink Temperature and Packaging-Induced Strain in a Single Emitter Laser Using a Laser Diode Simulation/Emulation Tool},
  journal = {Journal of Electrical and Electronic Engineering},
  volume = {1},
  number = {4},
  pages = {73-78},
  doi = {10.11648/j.jeee.20130104.12},
  url = {https://doi.org/10.11648/j.jeee.20130104.12},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.jeee.20130104.12},
  abstract = {This paper explores further the capability and versatility of Barlase in establishing deeper understanding of the behaviour of an emitter in a laser bar. The interactions between an emitter and the substrate upon which it is mounted are important in learning more about the degradation process that occurs in lasers. It is well known that various factors come into play in the operation of individual emitters and full laser bars (L-I characteristics, threshold, efficiency, etc.) but one of the most important is the effect of increased heatsink temperature and packaging-induced strain in laser bars. Barlase is therefore used to investigate these effects based on the Arrhenius equation. The relevant parameters are updated at each aging step. Barlase allows a better understanding of how current competition, temperature and the level of defects affect the output power and the degradation rate of a bar.},
 year = {2013}
}

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TY  - JOUR
T1  - Investigating the Effect of Increased Heatsink Temperature and Packaging-Induced Strain in a Single Emitter Laser Using a Laser Diode Simulation/Emulation Tool
AU  - Christian Kwaku Amuzuvi
AU  - Fuseini Mumuni
Y1  - 2013/09/30
PY  - 2013
N1  - https://doi.org/10.11648/j.jeee.20130104.12
DO  - 10.11648/j.jeee.20130104.12
T2  - Journal of Electrical and Electronic Engineering
JF  - Journal of Electrical and Electronic Engineering
JO  - Journal of Electrical and Electronic Engineering
SP  - 73
EP  - 78
PB  - Science Publishing Group
SN  - 2329-1605
UR  - https://doi.org/10.11648/j.jeee.20130104.12
AB  - This paper explores further the capability and versatility of Barlase in establishing deeper understanding of the behaviour of an emitter in a laser bar. The interactions between an emitter and the substrate upon which it is mounted are important in learning more about the degradation process that occurs in lasers. It is well known that various factors come into play in the operation of individual emitters and full laser bars (L-I characteristics, threshold, efficiency, etc.) but one of the most important is the effect of increased heatsink temperature and packaging-induced strain in laser bars. Barlase is therefore used to investigate these effects based on the Arrhenius equation. The relevant parameters are updated at each aging step. Barlase allows a better understanding of how current competition, temperature and the level of defects affect the output power and the degradation rate of a bar.
VL  - 1
IS  - 4
ER  -

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Author Information

Christian Kwaku Amuzuvi

Department of Electrical and Electronic Engineering, University of Mines and Technology, Tarkwa, Ghana
Fuseini Mumuni

Department of Electrical and Electronic Engineering, University of Mines and Technology, Tarkwa, Ghana

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Plain Text BibTeX RIS

APA Style

Christian Kwaku Amuzuvi, Fuseini Mumuni. (2013). Investigating the Effect of Increased Heatsink Temperature and Packaging-Induced Strain in a Single Emitter Laser Using a Laser Diode Simulation/Emulation Tool. Journal of Electrical and Electronic Engineering, 1(4), 73-78. https://doi.org/10.11648/j.jeee.20130104.12

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ACS Style

Christian Kwaku Amuzuvi; Fuseini Mumuni. Investigating the Effect of Increased Heatsink Temperature and Packaging-Induced Strain in a Single Emitter Laser Using a Laser Diode Simulation/Emulation Tool. J. Electr. Electron. Eng. 2013, 1(4), 73-78. doi: 10.11648/j.jeee.20130104.12

Copy | Download

AMA Style

Christian Kwaku Amuzuvi, Fuseini Mumuni. Investigating the Effect of Increased Heatsink Temperature and Packaging-Induced Strain in a Single Emitter Laser Using a Laser Diode Simulation/Emulation Tool. J Electr Electron Eng. 2013;1(4):73-78. doi: 10.11648/j.jeee.20130104.12

Copy | Download

@article{10.11648/j.jeee.20130104.12,
  author = {Christian Kwaku Amuzuvi and Fuseini Mumuni},
  title = {Investigating the Effect of Increased Heatsink Temperature and Packaging-Induced Strain in a Single Emitter Laser Using a Laser Diode Simulation/Emulation Tool},
  journal = {Journal of Electrical and Electronic Engineering},
  volume = {1},
  number = {4},
  pages = {73-78},
  doi = {10.11648/j.jeee.20130104.12},
  url = {https://doi.org/10.11648/j.jeee.20130104.12},
  eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.jeee.20130104.12},
  abstract = {This paper explores further the capability and versatility of Barlase in establishing deeper understanding of the behaviour of an emitter in a laser bar. The interactions between an emitter and the substrate upon which it is mounted are important in learning more about the degradation process that occurs in lasers. It is well known that various factors come into play in the operation of individual emitters and full laser bars (L-I characteristics, threshold, efficiency, etc.) but one of the most important is the effect of increased heatsink temperature and packaging-induced strain in laser bars. Barlase is therefore used to investigate these effects based on the Arrhenius equation. The relevant parameters are updated at each aging step. Barlase allows a better understanding of how current competition, temperature and the level of defects affect the output power and the degradation rate of a bar.},
 year = {2013}
}

Copy | Download

TY  - JOUR
T1  - Investigating the Effect of Increased Heatsink Temperature and Packaging-Induced Strain in a Single Emitter Laser Using a Laser Diode Simulation/Emulation Tool
AU  - Christian Kwaku Amuzuvi
AU  - Fuseini Mumuni
Y1  - 2013/09/30
PY  - 2013
N1  - https://doi.org/10.11648/j.jeee.20130104.12
DO  - 10.11648/j.jeee.20130104.12
T2  - Journal of Electrical and Electronic Engineering
JF  - Journal of Electrical and Electronic Engineering
JO  - Journal of Electrical and Electronic Engineering
SP  - 73
EP  - 78
PB  - Science Publishing Group
SN  - 2329-1605
UR  - https://doi.org/10.11648/j.jeee.20130104.12
AB  - This paper explores further the capability and versatility of Barlase in establishing deeper understanding of the behaviour of an emitter in a laser bar. The interactions between an emitter and the substrate upon which it is mounted are important in learning more about the degradation process that occurs in lasers. It is well known that various factors come into play in the operation of individual emitters and full laser bars (L-I characteristics, threshold, efficiency, etc.) but one of the most important is the effect of increased heatsink temperature and packaging-induced strain in laser bars. Barlase is therefore used to investigate these effects based on the Arrhenius equation. The relevant parameters are updated at each aging step. Barlase allows a better understanding of how current competition, temperature and the level of defects affect the output power and the degradation rate of a bar.
VL  - 1
IS  - 4
ER  -

Copy | Download