During the last decades, thin films of ZnO have given rise to a great interest, as transparent conducting oxides. This is due the optical and electrical properties of zinc oxide; it’s very high thermal and chemical stability, its non-toxicity as well as his abandonment in nature. The transparent conducting ZnO thin films were deposited on glass substrate by pyrolysis spray technique. Zinc acetate was used as starting solution with a molarity of 0.1 M. The structural and optical properties of the ZnO thin films were studied as a function of the substrate temperatures in the range of 100 to 400°C. Structural properties have been studied by X-ray diffraction (XRD) technique. The preferred orientation for ZnO thin films lies along (002) direction. From XRD data, the average crystallite size is determined from scherrer formula. The grain size is in the range of 10~27. The transmittance of the films is enhanced from 60 to 85% in the visible region in the range from 400 to 1100 nm by increasing the substrate temperature. The optical band gap energy attenuates from 3.67 to 3.25eV and whereas the Urbach energies of the films increase from 226 to 91.2 meV with increasing the substrate temperature from 100°C to 400°C.
| Published in | Optics (Volume 7, Issue 2) |
| DOI | 10.11648/j.optics.20180702.12 |
| Page(s) | 68-73 |
| Creative Commons |
This is an Open Access article, distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution and reproduction in any medium or format, provided the original work is properly cited. |
| Copyright |
Copyright © The Author(s), 2018. Published by Science Publishing Group |
ZnO, Thin Films, Substrate Temperature, Pyrolysis Spray, XRD, Transmission
| [1] | Laxmi Dangol and Leela Pradhan Joshi, Journal of Institute of Science and Technology, 21 (2016) 61–64. |
| [2] | A. Zaier, A. Meftah, A. Y. Jaber, A. A. Abdelaziz, M. S. Aida, Journal of King Saud University–Science, 27 (2015), 356-360. |
| [3] | M. Lalanne, J. M. Soon, A. Barnabe, L. Presmanes, I. Pasquet and Ph. Tailhades, Journal of Materials Research, 25(2010) 2407-2414. |
| [4] | A. Hafdallah, K. Derrar, M. S. Aida et N. Attaf, Afrique Science, 12 (2016) 26-33. |
| [5] | H. Belkhalfa, H. Ayed, A. Hafdallah, M. S. Aida, R. TalaIghil, Optik, (2016), 127, 2336–2340. |
| [6] | U. E. Uno, K. U. Isah, & T. O. Daniel, Global Journal of Engineering, Design & Technology, (2015) Vol. 4 (1), 1-7. |
| [7] | Abdulazeez O. Mousa, Nadir F. Habubi, Noor A. Nema, International Letters of Chemistry, Physics and Astronomy, 51 (2015)69–77. |
| [8] | Yacine Aoun, Boubaker Benhaoua, Brahim Gasmi, and Said Benramache, Journal of Semiconductors, 36 (2015)1-5. |
| [9] | Hassan ZareAsl, Seyed Mohammad Rozati, Materials Research. (2018); 21(2): 20170754. |
| [10] | Yasmeen Z. Dawood, Salah QaduriHaza, SabaJameelHasan, Najiba Abdullah Hasan, Journal of Applied Physics, 7 (2015) 50-54. |
| [11] | Rajesh Biswal, Luis Castañeda, Rosario Moctezuma, Jaime Vega-Pérez, María De La Luz Olvera and Arturo Maldonado, Materials, 5 (2012) 432-442. |
| [12] | Vinoth Kumar Jayaraman, Yasuhiro Matsumoto Kuwabar, Arturo Maldonado Álvarez, María de la luz Olvera Amador, Materials Letters 169 (2016) 1–4. |
| [13] | George Adamopoulos, Aneeqa Bashir, William P. Gillin, StamatisGeorgakopoulos, Maxim Shkunov, Mohamed A. Baklar, Natalie Stingelin, Donal D. C. Bradley and Thomas D. Anthopoulos, Advanced Functional Materials, Volume 21, Issue 3, pages 525–531, February 8, 2011. |
| [14] | A. Hafdallah, F. Yanineb, M. S. Aida and N. Attaf, J. Alloys. Compd, 509(26) (2011) 7267–7270. |
| [15] | Abdelkader Hafdallah, Abderrahman Azzedine, Hanane Belhani, Mohamed Salah Aida, Nadhir Attaf, American Journal of Nano Research and Applications, (2017), 5, 87–90. |
| [16] | F. Ynineb, A. Hafdallah, M. S. Aida, N. Attaf, J. Bougdira, H. Rinnert, S. Rahmane, Mater. Sci. Semicond. Process, 16 (2013), 2021-2027. |
| [17] | A. Hafdallah, A. Ferdi, M. S. Aida, N. Attaf and A. Amara, International Journal of Advanced Research, 3 (2015) 240–246. |
| [18] | R. Ayouchi, F. Martin, D. Leinen, J. R. Ramos-Barrado. Journal of Crystal Growth 247 (2003) 497–504. |
APA Style
Abdelkader Hafdallah, Fahima Djefaflia, Narimane Saidane. (2018). Structural and Optical Properties of ZnO Thin Films Deposited by Pyrolysis Spray Method: Effect of Substrate Temperature. Optics, 7(2), 68-73. https://doi.org/10.11648/j.optics.20180702.12
ACS Style
Abdelkader Hafdallah; Fahima Djefaflia; Narimane Saidane. Structural and Optical Properties of ZnO Thin Films Deposited by Pyrolysis Spray Method: Effect of Substrate Temperature. Optics. 2018, 7(2), 68-73. doi: 10.11648/j.optics.20180702.12
Share This Article
Twitter
Linked In
Facebook
Copy
Download@article{10.11648/j.optics.20180702.12,
author = {Abdelkader Hafdallah and Fahima Djefaflia and Narimane Saidane},
title = {Structural and Optical Properties of ZnO Thin Films Deposited by Pyrolysis Spray Method: Effect of Substrate Temperature},
journal = {Optics},
volume = {7},
number = {2},
pages = {68-73},
doi = {10.11648/j.optics.20180702.12},
url = {https://doi.org/10.11648/j.optics.20180702.12},
eprint = {https://article.sciencepublishinggroup.com/pdf/10.11648.j.optics.20180702.12},
abstract = {During the last decades, thin films of ZnO have given rise to a great interest, as transparent conducting oxides. This is due the optical and electrical properties of zinc oxide; it’s very high thermal and chemical stability, its non-toxicity as well as his abandonment in nature. The transparent conducting ZnO thin films were deposited on glass substrate by pyrolysis spray technique. Zinc acetate was used as starting solution with a molarity of 0.1 M. The structural and optical properties of the ZnO thin films were studied as a function of the substrate temperatures in the range of 100 to 400°C. Structural properties have been studied by X-ray diffraction (XRD) technique. The preferred orientation for ZnO thin films lies along (002) direction. From XRD data, the average crystallite size is determined from scherrer formula. The grain size is in the range of 10~27. The transmittance of the films is enhanced from 60 to 85% in the visible region in the range from 400 to 1100 nm by increasing the substrate temperature. The optical band gap energy attenuates from 3.67 to 3.25eV and whereas the Urbach energies of the films increase from 226 to 91.2 meV with increasing the substrate temperature from 100°C to 400°C.},
year = {2018}
}
TY - JOUR T1 - Structural and Optical Properties of ZnO Thin Films Deposited by Pyrolysis Spray Method: Effect of Substrate Temperature AU - Abdelkader Hafdallah AU - Fahima Djefaflia AU - Narimane Saidane Y1 - 2018/09/26 PY - 2018 N1 - https://doi.org/10.11648/j.optics.20180702.12 DO - 10.11648/j.optics.20180702.12 T2 - Optics JF - Optics JO - Optics SP - 68 EP - 73 PB - Science Publishing Group SN - 2328-7810 UR - https://doi.org/10.11648/j.optics.20180702.12 AB - During the last decades, thin films of ZnO have given rise to a great interest, as transparent conducting oxides. This is due the optical and electrical properties of zinc oxide; it’s very high thermal and chemical stability, its non-toxicity as well as his abandonment in nature. The transparent conducting ZnO thin films were deposited on glass substrate by pyrolysis spray technique. Zinc acetate was used as starting solution with a molarity of 0.1 M. The structural and optical properties of the ZnO thin films were studied as a function of the substrate temperatures in the range of 100 to 400°C. Structural properties have been studied by X-ray diffraction (XRD) technique. The preferred orientation for ZnO thin films lies along (002) direction. From XRD data, the average crystallite size is determined from scherrer formula. The grain size is in the range of 10~27. The transmittance of the films is enhanced from 60 to 85% in the visible region in the range from 400 to 1100 nm by increasing the substrate temperature. The optical band gap energy attenuates from 3.67 to 3.25eV and whereas the Urbach energies of the films increase from 226 to 91.2 meV with increasing the substrate temperature from 100°C to 400°C. VL - 7 IS - 2 ER -
Email: